Abstract
Graphene-based photodetectors have attracted much attention due to their unique properties, such as high-speed and wide-band detection capability. However, they suffer from very low external quantum efficiency in the infrared (IR) region and lack spectral selectivity. Here, we construct a plasmon-enhanced macro-assembled graphene nanofilm (nMAG) based dual-band infrared silicon photodetector. The Au plasmonic nanostructures improve the absorption of long-wavelength photons with energy levels below the Schottky barrier (between metal and Si) and enhance the interface transport of electrons. Combined with the strong photo-thermionic emission (PTI) effect of nMAG, the nMAG–Au–Si heterojunctions show strong dual-band detection capability with responsivities of 52.9 mA/W at 1342 nm and 10.72 mA/W at 1850 nm, outperforming IR detectors without plasmonic nanostructures by 58–4562 times. The synergy between plasmon–exciton resonance enhancement and the PTI effect opens a new avenue for invisible light detection.
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