Abstract
Many materials display plasmon peaks in their low-loss EELS spectra. The plasmon peak shape, energy, and linewidth are characteristic of each material and are sensitive to the outer-shell electron density and details of the electronic band and energy-level structures. As these properties are a function not only of the composition but also the structure and chemistry of a sample, plasmon spectroscopy can potentially become a materials characterization tool which goes beyond the elemental analyses provided by EDXS and ionization-edge EELS. However, analysis of plasmon spectra requires considerably more sophistication than either of the aforementioned techniques due to the possibility of overlapping spectrum features, the prevalence of plural scattering, and the difficulty in detecting and characterizing the often subtle differences between the plasmon spectra of similar materials. As yet, no systematic approach to plasmon analysis analogous to that available commercially for EDXS or EELS core-edge analysis has been developed. We present here an approach which, for the simple case of semiconductors, makes some progress in this direction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
