Abstract
A significant (by up to a factor of 7) increase in the internal quantum efficiency of luminescence is achieved at room temperature in semiconductor-metal-insulator hybrid structures fabricated by the successive deposition of gold and Si3N4 over an array of InGaN nanoblocks, grown by molecular-beam epitaxy. The observed effect can be accounted for by the resonant interaction of excitons localized in InGaN nanoblocks with localized surface-plasmon modes in gold intrusions embedded into InGaN and Si3N4.
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