Abstract
We have experimentally shown for the first time that threshold energies of plasma-induced deactivation for phosphorus, boron and antimony in silicon epitaxy by using a low-energy ion bombardment process [l-4]. The deactivation energy of phosphorus, boron and antimony at a growing silicon film surface is -13 eV, -5 eV and -10 eV respectively as shown in Table 1. Since the deactivation energy of boron is extremely small (< 5 eV), ion bombardment energy must be precisely controlled to be lower than 5 eV in order to make the activation ratio of dopants 100 %. The experimental results of plasma-induced deactivation energy of dopants will be crucial value for plasma processing, especially for low temperature processing using ion bombardment processes.
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