Abstract
Spin-on-glass materials (SOG) show interesting properties as intermediate layers in the tri-level resists. However, the process of SOG spin deposition does not lead to their final conversion to SiO 2. The organic materials used as bottom planarizing layers do not allow for the high temperature annealing to remove the organic compounds and to densify the SOG. Thus it is difficult to obtain good physical and chemical properties of the glasses. Such not completely condensed layers result in cracks and their uncontrolled removal by the alkaline solutions usually applied as developers of the exposed top resists. This work presents an efficient and fast plasma process subtantially increasing the resistance of SOG layers to alkaline developers. This improved method was succesfully applied to the tri-level lithography.
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