Plasma transformation of SiO films in SiO 2 at room temperature

Abstract

Oxygen plasma has been used to transform thin SiO deposited films into SiO 2 layers. Nuclear microanalysis, Rutherford backscattering and infrared spectroscopy have confirmed the formation of stoichiometric silicon dioxide by room temperature plasma anodization. Isotopic tracing experiments were carried out to study the ionic movements under high electric field [(1–2)X10 7 V/cm] during oxide growth. This process differs strongly from the pure Si plasma anodization, and leads to the formation of a few tens nm thick SiO 2 films in sequential steps: low temperature deposition of SiO and low temperature plasma treatment.