Abstract
In the framework of the development of a contact technology on III-V materials, the surface preparation of InP and InGaAs layers has been studied. The high sensitivity towards air oxidation of III-V materials implies the need of using quasi in-situ characterization to highlight clear trends in terms of oxide removal efficiency. The studies conducted on InP and InGaAs layers demonstrated that various surface treatments – based on Ar or He plasmas – can be used for obtaining oxide-free surfaces. The choice of a preferred treatment is governed by integration’s schemes and constraints. In this way, the use of He-based plasmas is advantageous especially for limiting the impact in terms of surface morphology – particularly for InP surfaces– and matter consumption.
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