Plasma–surface interaction at sharp edges and corners during ion-assisted physical vapor deposition. Part I: Edge-related effects and their influence on coating morphology and composition

Abstract

Ion-assisted physical vapor deposition (PVD) is a common industrial method for growing thin coatings of various interstitial nitride alloys. The interaction between the ions and three-dimensional nonflat samples during the deposition can, however, lead to unwanted local changes in the properties of the coating and thus its performance. We analyze the characteristics of the ion bombardment during ion-assisted PVD on sharp convex substrates and their effect on the growing coating. We show that the magnitude and the spatial extent of the edge-related changes are directly related to the characteristics of the plasma sheath around the biased edges. We examine the influence of the edge geometry and the deposition conditions. The edge-related effects are studied on the example of wedge-shaped samples coated with TiAlN/VN by closed-field unbalanced magnetron deposition process using high-flux low-energy Ar+-ion irradiation (Ji/Jme∼4, Ei=75−150 eV). The samples are analyzed by scanning electron microscopy and energy-dispersive x-ray spectroscopy. Significant changes in the morphology, thickness, and composition of the coatings are found in the edge region. In order to account for the changes, we apply a self-consistent model of the plasma sheath around wedge-shaped samples proposed by Watterson [J. Phys. D 22, 1300 (1989)], to our conditions. For a 30° wedge coated at −150 V, the resputtering rate in the edge region is found to be increased by up to ten times as compared to flat substrate areas. The effect is due to the combined action of an increased ion flux and increased sputtering yield as a result of the nonperpendicular angle of incidence of ions in the edge region. The situation at sharp corners, where even more severe effects are observed, is analyzed and modeled in the companion article E. B. Macak et al., J. Appl. Phys. (2003) (Part II).