Plasma processing technique by combination of plasma-assisted reactive sputtering and plasma annealing for uniform electrical characteristics of InGaZnO thin film transistors formed on large-area substrates

Abstract

The homogeneous formation of high-mobility oxide semiconductor thin films over large areas at low temperatures was accomplished by optimizing both the film formation process and the low-temperature post-processing via plasma annealing. Increasing the substrate-to-target distance (D ST) and the applied target voltage was found to produce more uniform deposition. The results of the field-effect mobility distributions of IGZO TFTs processed using plasma annealing were founded that plasma annealing generated essentially uniform distributions with μ FE values in the range of 32–35 cm2 V−1 s−1.