Abstract

For the first time the arsenic sulfide luminescence quantum dots have been prepared by Plasma-Enhanced Chemical Vapor Deposition (PECVD). The chalcogenide materials were synthesized as via direct interaction of elemental arsenic and sulfur vapors and as well as by disproportion of arsenic monosulfide vapors in RF (40 MHz) low-temperature non-equilibrium argon plasma discharge at low pressure. The structural and optical properties of the nanoclusters were studied. Having been prepared by the proposed method, the chalcogenide quantum dots possess the spherical and ellipsoidal shape. These forms are of practical interest, since they appear to be utilized as a source of polarized irradiation.

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