Abstract
Ferromagnetic tunneling junctions with Al-oxide and Ta-oxide as insulating layers were fabricated and the microstructure of the oxide layers was investigated with cross-sectional transmission electron microscopy (TEM). TEM analysis showed that as the Al-oxide thickness increased from 13 to 63 Å, the roughness rapidly increased and the magnetoresistive (MR) ratio also markedly dropped. The undulation of the Al-oxide with increasing thickness was proved to have resulted from the plasma oxidation process. In contrast, Ta-oxide layer remained flat regardless of the layer thickness. In comparison to the Al-oxide layer, partially oxidized Ta-layer junction exhibited poor MR characteristics. Growth mechanism for Al- and Ta-oxide layers microstructure is proposed in terms of oxidation kinetics and oxygen plasma characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
