Abstract
The radical oxidation of Ge(100) applying a dielectric barrier discharge plasma was investigated using metastable induced electron spectroscopy, ultraviolet photoelectron spectroscopy, and x-ray photoelectron spectroscopy. The plasma treatments were performed in a pure oxygen atmosphere as well as under environmental conditions at room temperature. In both atmospheres GeO2 layers up to thicknesses of several nm were formed on the Ge(100) surface.
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