Plasma Oscillations in Semiconductors with Non‐Standard Dispersion Law in the Presence of Electric and Magnetic Fields

Abstract

AbstractThe effect of the magnetic field H on the frequency of plasma oscillations in semiconductors with non‐standard energy band structure is investigated. In such semiconductors in the presence of a constant electric field F a specific bandstructural mechanism of amplification or attenuation of the oscillations arises. Assuming isotropic energy band structure of Kane type, this mechanism leads to attenuation. The magnetic field H ⟂ F decreases the attenuation, while the oscillations polarized in a certain way can even amplify it. Assuming a weakly anisotropic band structure, like that of the holes in Ge, the magnetic field affects the oscillations of light and heavy holes in different way. In this case also polarization directions are possible at which the bandstructural amplification of oscillation occurs in the magnetic field.