Abstract
We report on the p-type doping of tellurium-based compounds (CdTe, ZnTe) and alloys (CdMgTe, ZnMgTe, ZnCdTe) using nitrogen atoms from a plasma source in molecular beam epitaxy. A systematic decrease of the doping efficiency is observed as the Zn content decreases. We discuss the key role of the Zn content for the nitrogen doping efficiency, in the framework of two hypotheses: local strain induced in the lattice by the presence of nitrogen and formation of compounds involving nitrogen atoms.
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