Abstract
Abstract We investigated the effect of plasma nitridation of atomic layer deposition (ALD) Al2O3 films of crystalline Si wafers. Nitridation using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition for various RF plasma powers was performed on Al2O3 to form aluminum oxynitride (AlON). The plasma nitridation of the Al2O3 layer grown by ALD demonstrated a significant improvement in the passivation performance of a crystalline silicon solar cell. Indeed, the best values of open-circuit voltage and carrier lifetime for the AlON film at 400 W were 660 mV and 200 μs, respectively. The results of this experiment indicate that utilization of AlON film is a feasible means of improving the passivation performance of crystalline Si solar cells.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
