Abstract
In dielectrics and semiconductors, a plasma model of the generation and slip of dislocations is considered, where under shock loads in a generalized space of rectangular pulses an alternating field forms a distribution of pairs of photoelectrons and cations; these electrons with velocities Ve create δ-collisions with cold plasma from free electrons and holes with masses me and mh (mh ≫ me), they emit and absorb longitudinal electron plasma waves whose phase velocities wpw / kpw are close to or are equal to the velocities Ve, while the frequencies wpw and wave numbers kpw of the wave packet of plasma waves are complex, the short-wave components of this wave packet at kpw ⋅ ae ≫ 1 (ae -Debye screening radius) decay in the core linear defect, and its long-wavelength components propagate in the region of the medium surrounding the core of the defect at kpw ⋅ ae ≅ 1. When a defect is generated, the distribution of cations under the influence of the internal Coulomb field shifts to the region of the first peak (protrusion) of the electron plasma wave, thereby forming a vacancy valley. When sliding under the influence of an external electric field, a cationic plasma wave consisting of a vacancy valley and two cationic protrusions moves against the background of an additional potential relief created by an electron plasma wave near the core of the defect. It has been shown that δ-collisions create flows of dynamic large-scale correlations of plasma fluctuations in the form of asymptotics of different-time correlators of density and potential fluctuations as t → +∞.
Highlights
At present, the fundamental theory of the nuclei of linear defects in semiconductors is the Reed discrete static model [1] [2], where it was assumed that an additional half-plane of the edge dislocation introduces a chain of free or unsaturated bonds into the crystal
Due to the attraction of free electrons to these bonds in germanium, as well as in most cases, a negative linear charge of a dislocation core arises in silicon, which forms a cylindrical space charge in the environment surrounding the core with a radius R from 1 to 10 μm
1) Here a natural question arises: What is the reason for the appearance of the plasma model of linear defect nuclei? First, the impossibility of sufficiently reliably representing the essence and mechanisms of electroplastic and magnetoplastic effects [13]
Summary
The fundamental theory of the nuclei of linear defects in semiconductors is the Reed discrete static model [1] [2], where it was assumed that an additional half-plane of the edge dislocation introduces a chain of free or unsaturated bonds into the crystal. Where neh and N are the average densities of electron-hole pairs formed per unit time and valence electrons, respectively; a0* is the effective lattice parameter; α is the ratio of the width of the valence band to the width of the conduction band. It was shown in [3] that when injected electrons move in the volume of a shock wave in the velocity range Vie = 4 ×103 ÷1×106 m s and pressures p= 1.2 ×1010 ÷1×1011 Pa for alkali halide crystals of the NaCl type, the value of. The aim of this work is to build a plasma model of the processes of generation and slip of linear defects in dielectrics and semiconductors
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