Abstract
This paper describes the device damage due to plasma exposure. Of the many sources of damage the oxide charging is of the most significance in modern small geometry devices fabricated in ULSI technology. In addition, edge damage also plays a significant role in the damage to the device. The effect of oxide thickness on charging damage is described. Oxide wear-out, which manifests itself as increased oxide leakage current and lower breakdown characteristics, is more sensitive indicator of damage than the shift in threshold voltage and subthreshold characteristics.
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