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Abstract
Disturbing high frequency oscillations observed during turn-off of IGBT modules can be explained by (i) a local parasitic resonant circuit and (ii) a new r.f. generator mechanism similar to the BARITT diode effect. The phenomenon is related to periodic hole extraction from the electron–hole plasma. Therefore it will be called “plasma extraction transit time” effect. This effect can be modelled using device simulation. The r.f. generation efficiency is very small. Resonator Q-factor, resonance frequency and carrier transit time must fit well to enable excitation of the parasitic resonant circuit.
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