Abstract
The feasibility of utilizing halocarbon etchants to anisotropically etch tungsten polycide structures has been investigated. Chemical vapor deposited tungsten silicide and low‐pressure chemical vapor deposited polysilicon have been etched using various mixtures of , , and with . Anisotropy, undercutting, and notching were evaluated using cross‐sectional scanning electron microscopy. Etch rates and profiles were controlled by utilizing halocarbon‐rich (>50%) binary halocarbon etchants. The etch rate data indicate that the volatility of the tungsten halide formed during etching influences the silicide etch rate and profile while the polymer forming ability of the halocarbon controls the etch characteristics of the polysilicon.
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