Abstract
A neat plasma etches Si and at rates of about 900 and 120 Å/min, respectively. Neat etches Si and at about 320 and 90 Å/min, respectively, while etches at 390 and 385 Å/min, respectively. The discharge decomposes to the extent of 5%; to the extent of 13%, and to 51%. Mixtures of and show no synergism. The percentages of decomposition for a 1:1, discharge are 17 and 4, respectively. The and appear to interact only slightly as evidenced by the formation of a small amount of . Addition of to decreases the plasma etch rate for both Si and. The percentages of decomposition for a 1:4, discharge are 54 and 30, respectively; both and are formed.
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