Abstract
In the photomask manufacturing, dry etch process is one of important process and the etch process mainly affects CD uniformity, skew, and Cr slope. We will present newly developed dry etcher system using TCP (transformer coupled plasma) source and its Cr etch performance. We will investigate the performance of TCP source for the uniformity, linearity, and loading effects. CD uniformity of 0.8 um Cr space pattern at 11 x 11 arrays with 135 x 135 mm 2 area is below 8 nm and 15 nm in 3 sigma in case of ZEP7000 and IP3500 as resists, respectively. The skew (ASI - ADI) linearity of clear and dark CDs from 0.4 um to 2 um is below 35 nm in case of IP3500. The Cr loading characteristics of TCP source is investigated and the etch process parameter dependence on the loading is verified.
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