Abstract
Silicon nitride films for applications in optical waveguides have been deposited by plasma-enhanced chemical vapour deposition (PECVD). Index of refraction, deposition rate, buffered HF etch rate and hydrogen content have been measured for different NH 3-to-SiH 4 ratios of precursor gases in the range 0.6–10. Results show that these magnitudes are nearly constant for 2⩽ NH 3: SiH 4⩽4. Thermal annealing of films deposited at high NH 3:SiH 4 ratios yields a large reduction (up to 70%) in the NH bond concentration as well as a densification of the films. Finally, geometrical parameters necessary for the design of rib-type monomode optical waveguides based on the PECVD silicon nitride films were calculated.
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