Plasma‐Enhanced Chemical Vapor Deposition of Silicon Dioxide Deposited at Low Temperatures

Abstract

Thin silicon dioxide films are commonly used as insulating layers in metal‐insulator structures, such as integrated circuits and multichip modules. These films are either thermally grown or deposited by thermal or plasma‐enhanced chemical vapor deposition (PECVD). The advantage of PECVD is that lower deposition temperatures can be used avoiding defect formation, diffusion, and degradation of the metal layer. However, the low deposition temperature of the PECVD process has a negative effect on the quality of the silicon dioxide. Oxides produced at low temperatures contain more silanol and water impurities and are more porous than those deposited at higher temperatures. The deposition parameters, including substrate temperature, RF power, pressure, and reactant gas flow rate, affect the silanol and water concentration. The substrate temperature has the largest effect on the silanol concentration of the oxide. Using a large RF power, high pressure, and low nitrous oxide to silane ratio will minimize the silanol concentration at a given temperature. This will minimize the dielectric constant and maximize the etch resistance of the oxide produced.