Abstract
ABSTRACTCubic boron nitride (cBN) thin films were deposited on silicon wafers by low-pressure inductively coupled plasma-enhanced chemical vapor deposition (ICP-CVD). By using special substrate pre-treatment processes including positive biasing treatment in H2 plasma or 1200 K pre-heating in H2 atmosphere followed by an N2 plasma treatment, turbostratic BN (tBN) intermediate layer was revealed to directly grow on Si substrates without an initial amorphous layer. The thickness of the tBN transition layer can be reduced to less than 3 nm.
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