Plasma Enhanced Chemical Vapor Deposition of Blanket TiSi2 on Oxide Patterned Wafers: I . Growth of Silicide

Abstract

We investigated the effects of deposition variables on the growth of stable films and the silicon consumption from the substrate during the deposition of in a cold wall plasma enhanced chemical vapor deposition system. Low resistivity silicide films were deposited at temperatures ranging from 590 to 775°C and a flow rate from 6/2 to 10/6 (sccm). The as‐deposited films did not require any postannealing to lower the resistivity. It was observed that, depending on deposition conditions, substrate silicon consumption occurred during silicide deposition. However, a high flow rate and low deposition temperature effectively suppressed silicon consumption. The deposition of a conformal blanket film with no silicon consumption at 590°C and of 8/4 (sccm) confirmed the effects of temperature and gas flow ratio on silicon consumption. A kinetic model of silicon consumption is proposed to provide a description of the effects of silane gas flow rate on silicon consumption.