Abstract
ZnO heterojunction light emitting diodes (LEDs) were passivated by plasma-enhanced chemical vapor-deposited SiO2 and SiNx. Post-dielectric deposition annealing was critical in obtaining good LED electrical and optical characteristics. No diode characteristics or light emission were observed unless the structures were annealed at 350 {degree sign}C after fabrication. Annealed diodes showed band-edge electroluminescence (385 nm) and a broad defect band with a peak at 930 nm at room temperature. The SiO2 and SiNx had very different passivation effects in terms of the electrical and electro-luminescence characteristics of the LEDs. After annealing, the SiO2 passivated ZnO LEDs showed diode IV characteristics and emitted light. However, the annealed SiNx-passivated ZnO LEDs showed leaky diode characteristics and no light emission. We attribute these differences to the role of hydrogen on the LEDs.
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