Abstract
Benefiting from the good etching and patterning feasibilities and excellent electrical properties, platinum silicide attracts renewed attention as a suitable candidate for the next generation complementary metal-oxide-semiconductor (CMOS) technologies recently. This work focuses on the effects of the trimethylaluminum (TMA) pretreatment on the Plasma Enhanced Atomic Layer Deposition (PEALD) growth of Platinum (Pt) film on silicon substrate by using (methylcyclopentadienyl)-trimethyl platinum (MeCpPtMe3) and ammonia plasma as precursors. The incubation period of PEALD Pt was shortened by TMA pretreatment, and the saturation growth rate reached 0.21 Å/cycle. X-ray diffraction showed that as-deposited films have strongly preferred orientation along the (111) plane. The resistivity of the as-deposited Pt film can be approached to 15 μΩ cm. At last, an optimized PEALD Pt process was put forward. Our research provides an effective strategy for the fabrication of high-quality Pt thin films on Si substrate. The findings are important to obtain well defined silicide films which would be used in the advanced CMOS source and drain technology.
Published Version
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