Abstract
Plasma-enhanced atomic layer deposition of HfO2 films using a novel (η5:η1- Cp(CH2)2NMe)Hf(NEtMe)2 (MAP-Hf01) precursor and Ar/O2 plasma as a co-reactant was studied. Saturated atomic layer deposition with nearly constant growth per cycle of 0.65 Å/cycle was observed and the O/Hf ratio was similar to that of bulk HfO2 at deposition temperatures ranging from 200 °C to 400 °C. With increasing HfO2 deposition temperature, the crystallinity and density of the HfO2 film also increased; however, the concentration of OH-related defects and surface roughness showed the opposite tendency. Notably, HfO2 film deposited at 400 °C exhibited the lowest level of hafnium suboxide (HfOx) and the highest crystallinity in monoclinic phase. The high-quality HfO2 films produced over a well-defined ALD window demonstrate that MAP-Hf01 is a promising candidate for deposition of HfO2 in advanced microelectronics.
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