Abstract
The demand for advanced packaging is driven by the need for low-profile, densely-integrated, large-die Si devices in substrate-based or wafer-level packaging. Die strength is a critical parameter for ultrathin dies, making die singulation a vital aspect of advanced packaging technology. In this work, we present a dicing before grinding (DBG) process to compare and analyze die strengths using a mechanical blade, stealth laser, and plasma dicing. The three DBG processes were applied to a 200 mm silicon (Si) wafer process with a die size of 10 × 10 mm2 and thicknesses of 100, 200, and 300 μm, respectively. Optical and electron microscopes were employed to investigate chipping quality, sidewall damage, and surface contamination. The bare Si die’s strength was assessed using a three-point bending test. Plasma dicing before grinding (PDBG) resulted in less contamination, chipping, and cracking compared to other DBG processes. Furthermore, PDBG exhibited the highest die strength of 1052 Pa.
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