Abstract
This study demonstrated the use of quadrupole mass spectrometer (QMS) and optical emission spectrometer (OES) in diagnosing plasma process of electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The result showed that, by adjusting main magnetic coil current in ECR-CVD system, the relationship between plasma chemical composition and magnetic field was discussed in this paper. As the results, by controlling appropriate magnetic field configuration, the characteristics of a-Si:H thin film such as photosensitive, microstructure and deposition rate could be improved.
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