Abstract
The composition and annealing characteristics of plasma deposited silicon nitride encapsulating films on ion implanted indium phosphide have been investigated. X‐ray photoelectron spectroscopy was employed to study the surface of substrates cleaned with organic solvents and or solutions prior to encapsulation. The composition of silicon nitride films deposited with 13.56 MHz RF excitation was determined through Auger electron spectroscopy and infrared spectroscopy both before and after annealing. The hydrogen concentration decreased from 21 to 9% during annealing. substrates implanted with silicon at 100 keV to a dose of and 150 keV to a dose of had activations of approximately 60% after annealing at 700°C. X‐ray photoelectron spectroscopic measurements were performed at five depths through the silicon nitride/indium phosphide interface of an annealed and an unannealed sample. No chemical interaction between the film and the substrate was observed before or after annealing. However, a change in the composition of the interfacial native oxides upon annealing is suggested from differences between the oxygen peaks for the unannealed and annealed samples.
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