Abstract
Antenna-transistor test structures were used to study a high density plasma (HDP) via etch and an argon plasma sputter clean process. Topography dependent electron shading effects were found to be the dominant damage mechanism in the HDP etch tool, while HDP nonuniformity was found to have little impact on device degradation. Radiation from the HDP caused negative threshold voltage shifts in nonannealed devices. Statistical methods were used to determine the charging damage response surface in a via sputter clean tool, with bias and source RF power settings as input variables. Device damage can easily be minimized by reducing the source RF power.
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