Abstract
Abstract— High‐quality SiO2 films have been fabricated at a substrate temperature of 300°C by utilizing a novel deposition method refered to as radical‐shower CVD (RS‐CVD), in which the substrates and material gases are completely separated from the plasma. On this account, SiO2 deposition is achievable without plasma damage and excessive decomposition of the material gases. The electrical characteristics of RS‐CVD SiO2 films are comparable to those of thermal SiO2. Furthermore, the compact parallel‐plate structure of RS‐CVD is suitable for large‐area deposition.
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