Abstract
High-density plasma dry etching was performed with a mixture of CF4/O2/Ar gases, and the plasma resistant properties of RO-Al2O3-SiO2 (R: alkaline earth) glass were analyzed. RAS had etch rates below 25㎚/min, which are lower than that of alumina and sapphire. CAS showed an improvement in the etch rate, which corresponds to 72% of that recorded by sapphire. The plasma resistant properties of RAS glass are more significantly influenced by the sublimation temperature with fluoride than atomic binding energy. The difference in the etch rates of the RAS glass was smaller at higher sublimation temperatures.
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