Abstract
ABSTRACTWe designed a plasma cell for nitrogen doping of ZnSe, using a metal organic vapour phase epitaxy (MOVPE) horizontal reactor. With the following growth conditions: Tg=300°C, P=1 Torr and a molar VI/II ratio of 5, successful p-type doping was obtained, as assessed by photoluminescence experiments, but with a free carrier concentration still too low to be detected by transport measurements. The passivation of nitrogen active species by hydrogen is discussed. The possible interaction with the carrier gas has been studied through the use of H2, N2 and He as carrier gases. We demonstrate that the use of helium as carrier gas leads to sensible improvement of the photoluminescence features related to nitrogen acceptor. On the other hand, the use of N2 as carrier gas leads to poor homogeneity of the layers with few effects on the doping level.
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