Abstract
AbstractIn this work we present details of growth of GaN epitaxial layers on Si(111) substrates by molecular beam epitaxy (MBE) with the use of RF nitrogen plasma source. We focus on preparation of silicon substrate before the growth, on procedure of AlN buffer growth initiation (aluminum or nitrogen first) and on influence of III/N ratio on structural properties of the layers. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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