Abstract
Cubic and hexagonal GaN films were grown on (001) GaAs substrates by plasma-assisted low-pressure metalorganic chemical vapor deposition using triethylgallium and nitrogen radicals. The GaN growth rate was lower than that of GaAs and it was enhanced by simultaneous supply of hydrogen radicals to the growing surface. Cubic GaN was grown epitaxially under Ga-rich conditions, and c-axis oriented hexagonal GaN was grown under N-rich conditions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
