Abstract
The etching of aluminum has been studied in a diode reactor fed with CCl4−Cl2 mixtures. The overall reaction has been found to be influenced by the contemporaneous deposition of low-volatile etch products and/or a chlorocarbon polymer film originating from the polymerization of CClx species. A simple approach is described which allows the chemical contribution to the etch process to be distinguished from the physical one of through-film diffusion. The etching of a “clean” Al surface is shown to be controlled by chlorine chemisorption at low temperature.
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