Abstract
AbstractWe have studied the growth of GaN layers by plasma‐assisted electroepitaxy (PAEE). We have used an RF‐plasma source to produce high concentrations of N species in the Ga melt and a high DC electric current to transfer the N species from the Ga surface to the growth interface. We have achieved continuous GaN layers by PAEE at growth temperatures as low as ∼650oC. We have also investigated PAEE growth of GaN layers on GaN nanocolumn templates. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
