Abstract
<p indent=0mm>Thin films of transition metals and their carbides are widely used in the fields of microelectronics, energy, and catalysis. Plasma-assisted atomic layer deposition (P-ALD) can generate highly reactive species and is characteristic of low deposition temperature and completeness of reactions; therefore, P-ALD is an important technique to prepare continuous, conformal, high-quality nanofilms of transition metals and their carbides on complex 3D-structured substrates. This study first introduces the basic principles of the P-ALD technology. Then, it reviews the current research progress of P-ALD for transition metals and their carbides, with particular highlights on the advantages of reducing deposition temperature, shortening nucleation period, enhancing reaction activity, and improving deposition rate and film purity. Lastly, it provides perspectives on the future directions of the P-ALD technology.
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