Plasma‐Assisted Atomic Layer Deposition of Al2O3 at Room Temperature

Abstract

AbstractA new design of plasma source has been used for the plasma‐assisted atomic layer deposition (PA‐ALD) of Al2O3 films at room temperature. In this PA‐ALD reactor the plasma is generated by capacitive coupling directly in the deposition chamber adjacent to the substrate but can be separated from it by a grid to reduce the ion bombardment while maintaining the flow of radicals directly to the substrate surface. During the ALD cycle a mixture of nitrogen and argon was introduced into the reactor to act as a purge gas between precursor pulses and to facilitate the generation of a plasma during the plasma cycle. Sequential exposures of TMA and excited O2 precursors were used to deposit Al2O3 films on Si(100) substrates. A plasma discharge was activated during the oxygen gas pulse to form radicals in the reactor space. The experiments showed that the growth rate of the film increased with increasing plasma power and with increasing O2 pulse length before saturating at higher power and longer O2 pulse length. The growth rate saturated at the level of 1.78 Å·cycle−1. EDS analysis showed that the films were oxygen rich and had carbon as an impurity. This can be explained by the presence of bonds between hydrocarbons from the unreacted TMA precursor and excess oxygen in the film. ATR‐FTIR spectroscopy measurements indicated a change in growth mechanism when the distance between the location of the radical generation and the substrate was varied. A similar effect was observed with the use of different plasma power levels.