Abstract
A simple method of preparing plasma-grown anodic oxide on GaAs with improved physical and electrical properties is described. A GaAs surface was sputtered by positive oxygen ions prior to the plasma anodization, resulting in a Ga-rich oxide layer on the surface. The oxide formed through this Ga-rich layer had a low pin hole density and exhibited high breakdown voltages (3×106 V/cm) and less hysteresis in MOS-device C-V characteristics.
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