Abstract
Oxides have been grown on n-type Ga1−xInxAs/GaAs wafers (x=0.35 and 0.10) using plasma anodisation. According to C/V measurements, the surface can be biased into inversion and probably accumulation on Ga0.65In0.35As. The interface trap density is about 1012 cm−2eV−1 near midgap, and about 1013 cm−2eV−1 near flatband. MOS capacitors on Ga0.90In0.10As exhibit a high density of interface States 0.4–0.5 eV below the conduction band.
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