Plasma and surface reactions for obtaining low defect density amorphous silicon at high growth rates

Abstract

Gas phase and surface reaction processes in the radio frequency plasma enhanced decomposition of silane for the preparation of hydrogenated amorphous silicon (a-Si:H) are discussed. The conditions necessary for obtaining a low defect density material is discussed in terms of the gas phase reactive species and their surface reactions. The problems that occur when attempting to increase the growth rate are discussed from the viewpoint of plasma chemistry and its effect on surface reactions. Thereby, the conditions necessary for obtaining low defect density material at high growth rates are identified.