Abstract
In this paper, a new process is analysed to improve the contact area between a metallic bridge and a signal line of a capacitive switch thanks to a better membrane planarization. Two planarization methods are investigated: thermal process with hard-bake steps and chemical mechanical polishing planarization. Moreover, two different sacrificial layers are used: polyimide (PMGI) and photoresist (AZ1529). For each sacrificial layer and planarization method, the influence of planarity and roughness on down-state capacitance is evaluated. Results show that down-state capacitance is more sensitive to flatness than roughness. Moreover PMGI is the best sacrificial layer to improve down-state capacitance mainly for high resonance frequency switches due to capacitance surface reduction.
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