Abstract
In this study, a gallium nitride (GaN) substrate grown by the Na flux method was processed by catalyst-referred etching (CARE). CARE process for GaN involves two-step: the first step uses the photoelectrochemical process (PEC-CARE) and the second step applies a platinum (Pt) catalyst (Pt-CARE). PEC-CARE can produce a highly ordered GaN (0001) surface. The surface roughness was 0.638 nm root-mean-square (rms). Pt-CARE can produce an atomically flat surface with a step-terrace structure on the entire surface. The surface roughness was 0.113 nm rms. The removal rates of PEC-CARE and Pt-CARE were found to be 45.5 and 5.5 nm/h, respectively.
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