Planar tunneling Hall effect in two-layer system

Abstract

We investigate planar Hall effect and related phenomena in the two-layer system consisting of ferroelectric barrier with spin–orbit coupling and thin ferromagnetic layers. We demonstrate that planar Hall effect in this system is a size effect which originates from finite thickness of ferromagnetic layer and spin–orbit coupling linear in wave number in the barrier. Our calculations reveal that Hall current, spin Hall current and spin accumulation in the barrier layer as well as in the ferromagnetic layer can be manipulated by the reversal of electrical polarization of the barrier and by changing the direction of magnetization of ferromagnetic layer.