Abstract
The aim of this paper is to demonstrate, for the first time, the possible existence of planar point defect silicon self-interstitials in the ${311}$ plane. The results offer a plausible explanation as to why self-interstitials aggregate to form ${311}$ defect clusters during ion implantation. These interstitials do not leave any dangling bonds and can be considered to be ``extended,'' due to spread out perturbations.
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