Abstract
In this paper, performance characteristics of new, planar processed silicon avalanche photodiodes (APD) and arrays are discussed for scintillation spectroscopy as well as direct X-ray detection. We have successfully fabricated large area APDs with sizes ranging from 1 cm/sup 2/ to 13 cm/sup 2/ using a novel planar process. The devices have shown very high gain (10/sup 4/), low noise ( 60% for /spl lambda/>400 nm). Direct X-ray detection has been achieved with high energy resolution (1.5 keV FWHM for 5.9 keV X-rays for 1 cm/sup 2/ size) at room temperature.
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