Planar Multi-Gate Artificial Synaptic Transistor with Solution-Processed AlOx Solid Electric Double Layer Dielectric and InOx Channel

Abstract

Multi-terminal artificial synaptic devices are promising for building neural morphological networks and manufacturing neural chips. In this study, planar multi-gate InOx-based artificial synaptic transistor was demonstrated by using solution-processed AlOx as an electric double layer (EDL) dielectric with mobile hydrogen protons. The excitatory postsynaptic current (EPSC) was successfully controlled by adjusting amplitude, duration, and interval of the stimulating voltage pulses applied on the planar gates. The EPSC stimulated by multiple inputs shows the property of sublinear summation. As spatial resolution function of the artificial synaptic transistor, the EPSC depends on the presynaptic (planar gate) area and distance to the channel, nonlinearly. The paired-pulse facilitation (PPF), depending on time sequence, demonstrates the temporal resolution function of the multi-gate artificial synaptic transistor. The study shows the potential of planar multi-gate AlOx/InOx EDL transistor as multi-terminal artificial synaptic device.